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Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures

Identifieur interne : 000170 ( Russie/Analysis ); précédent : 000169; suivant : 000171

Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures

Auteurs : RBID : Pascal:09-0227944

Descripteurs français

English descriptors

Abstract

A violet-green integrated laser converter with a quantum efficiency of ∼1% at a wavelength of 515 nm has been fabricated on the basis of a CdSe/ZnSSe/ZnMgSSe quantum dot (QD) laser heterostructure. The structure is optically pumped by a 416 nm emission of a commercial InGaN/GaN-pulsed laser diode via a microlens system. Different designs of the CdSe QD laser structures grown by molecular beam epitaxy have been employed, with the maximum efficiency being achieved in the structure comprising five electronically coupled CdSe QD active layers embedded in a ZnSSe/ZnSe superlattice waveguide.

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Pascal:09-0227944

Le document en format XML

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<term>Heterostructures</term>
<term>II-VI semiconductors</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium nitride</term>
<term>Laser diodes</term>
<term>Microlenses</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructures</term>
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<term>Quantum yield</term>
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<term>Epitaxie jet moléculaire</term>
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<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Diode laser</term>
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<term>Guide onde</term>
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<term>Nitrure d'indium</term>
<term>Séléniure de zinc</term>
<term>Semiconducteur II-VI</term>
<term>CdSe</term>
<term>InGaN</term>
<term>GaN</term>
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<div type="abstract" xml:lang="en">A violet-green integrated laser converter with a quantum efficiency of ∼1% at a wavelength of 515 nm has been fabricated on the basis of a CdSe/ZnSSe/ZnMgSSe quantum dot (QD) laser heterostructure. The structure is optically pumped by a 416 nm emission of a commercial InGaN/GaN-pulsed laser diode via a microlens system. Different designs of the CdSe QD laser structures grown by molecular beam epitaxy have been employed, with the maximum efficiency being achieved in the structure comprising five electronically coupled CdSe QD active layers embedded in a ZnSSe/ZnSe superlattice waveguide.</div>
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<s0>A violet-green integrated laser converter with a quantum efficiency of ∼1% at a wavelength of 515 nm has been fabricated on the basis of a CdSe/ZnSSe/ZnMgSSe quantum dot (QD) laser heterostructure. The structure is optically pumped by a 416 nm emission of a commercial InGaN/GaN-pulsed laser diode via a microlens system. Different designs of the CdSe QD laser structures grown by molecular beam epitaxy have been employed, with the maximum efficiency being achieved in the structure comprising five electronically coupled CdSe QD active layers embedded in a ZnSSe/ZnSe superlattice waveguide.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s0>Rendement quantique</s0>
<s5>03</s5>
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<s0>Quantum yield</s0>
<s5>03</s5>
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<s5>04</s5>
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<s0>Quantum dot lasers</s0>
<s5>04</s5>
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<s0>Hétérostructure</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="3" l="ENG">
<s0>III-V semiconductors</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE">
<s0>Composé III-V</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG">
<s0>III-V compound</s0>
<s5>07</s5>
</fC03>
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<s0>Compuesto III-V</s0>
<s5>07</s5>
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<s5>08</s5>
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<s0>Laser diodes</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s0>Microlentille</s0>
<s5>10</s5>
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<s5>10</s5>
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<s0>Couche active</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG">
<s0>Active layer</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA">
<s0>Capa activa</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Superréseau</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG">
<s0>Superlattices</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Guide onde</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Waveguides</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>Composé du cadmium</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG">
<s0>Cadmium compounds</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE">
<s0>Séléniure de cadmium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG">
<s0>Cadmium selenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE">
<s0>Zinc Sulfoséléniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG">
<s0>Zinc Selenides sulfides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA">
<s0>Seleniuro sulfuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>16</s5>
</fC03>
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<s0>Nitrure de gallium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG">
<s0>Gallium nitride</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA">
<s0>Galio nitruro</s0>
<s5>17</s5>
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<s5>18</s5>
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<s0>Indium nitride</s0>
<s5>18</s5>
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<s5>18</s5>
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<s2>NK</s2>
<s5>19</s5>
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<s2>NK</s2>
<s5>19</s5>
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<s0>Semiconducteur II-VI</s0>
<s5>29</s5>
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<s0>II-VI semiconductors</s0>
<s5>29</s5>
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<s0>CdSe</s0>
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<s5>46</s5>
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<s5>47</s5>
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<s5>48</s5>
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<s4>INC</s4>
<s5>49</s5>
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<s0>8115H</s0>
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<s5>71</s5>
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<fN44 i1="01">
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<pR>
<fA30 i1="01" i2="1" l="ENG">
<s1>International Conference on Molecular Beam Epitaxy</s1>
<s2>15</s2>
<s3>Vancouver CAN</s3>
<s4>2008-08-03</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
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